Deep Defect Centers in Silicon Carbide Monitored with Deep Level Transient Spectroscopy
1997 ◽
Vol 162
(1)
◽
pp. 199-225
◽
Keyword(s):
2013 ◽
Vol 205-206
◽
pp. 451-456
◽
2009 ◽
Vol 615-617
◽
pp. 699-702
◽
2016 ◽
Vol 63
(2)
◽
pp. 1083-1090
◽
2011 ◽
Vol 679-680
◽
pp. 265-268
◽
Keyword(s):
2010 ◽
Vol 645-648
◽
pp. 419-422
2010 ◽
Vol 645-648
◽
pp. 423-426
◽